Self-consistent subband calculation of GaN HEMTs
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Updated
Aug 4, 2020 - Pascal
Self-consistent subband calculation of GaN HEMTs
Lightweight, modular TCAD core for GaN RF HEMTs: plugin-based architecture, self-consistent Schrodinger-Poisson and drift-diffusion solvers, 426 tests.
Automated, physics-based AlGaN/GaN HEMT design-space exploration: polarization charge control, velocity-saturated Id, and a Pareto front for the Ron-vs-breakdown-voltage trade-off.
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